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   auirfr2407 hexfet ? power mosfet www.irf.com 1 pd - 97689a automotive grade gds gate drain source d-pak auirfr2407    features 


      
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     & absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, vgs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited)  mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt  v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case  CCC 1.4 r ja junction-to-ambient (pcb mount)  CCC 50 c/w r ja junction-to-ambient CCC 110 -55 to + 175 300 110 0.71 20 max. 4229 170 5.0 11 130 25 v (br)dss 75v r ds(on) typ. 21.8m max 26m i d (silicon limited) 42a s d g downloaded from: http:///

2 www.irf.com   repetitive rating; pulse width limited by max. junction temperature.  starting t j = 25c, l = 0.42mh r g = 25 , i as = 25a.  i sd 25a, di/dt 290a/ s, v dd v (br)dss , t j 175c.  pulse width 300 s; duty cycle 2%.  c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .  when mounted on 1" square pcb (fr-4 or g-10 material) .for recommended footprint and soldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 75 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.078 CCC v/c r ds(on) static drain-to-source on-resistance CCC 21.8 26.0 v gs(th) gate threshold voltage 2.0 CCC 4.0 v gfs forward transconductance 27 CCC CCC s i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 200 na gate-to-source reverse leakage CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 74 110 q gs gate-to-source charge CCC 13 19 nc q gd gate-to-drain ("miller") charge CCC 22 34 t d(on) turn-on delay time CCC 16 CCC t r rise time CCC 90 CCC t d(off) turn-off delay time CCC 65 CCC ns t f fall time CCC 66 CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 2400 CCC c oss output capacitance CCC 340 CCC pf c rss reverse transfer capacitance CCC 77 CCC c oss output capacitance CCC 15700 CCC c oss output capacitance CCC 220 CCC c oss eff. effective output capacitance CCC 220 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 42 (body diode) a i sm pulsed source current CCC CCC 170 (body diode)  v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 100 150 ns q rr reverse recovery charge CCC 400 600 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) m v ds = 25v conditions v ds = v gs , i d = 250 a v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 25a  i d = 25a v ds = 60v v gs = 20v v gs = -20v v gs = 10v  v ds = 75v, v gs = 0v v ds = 60v, v gs = 0v, t j = 150c mosfet symbol v dd = 38v i d = 25a r g = 6.8 conditions v gs = 10v  v gs = 0v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 60v v gs = 0v, v ds = 60v, ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 25a  t j = 25c, i f = 25a di/dt = 100a/ s  t j = 25c, i s = 25a, v gs = 0v  showing the integral reverse p-n junction diode. downloaded from: http:///

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 4 qualification information ? d-pak msl1 rohs compliant yes esd machine model class m4 (+/- 500v) ??? aec-q101-002 human body model class h1c (+/- 2000v) ??? aec-q101-001 charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. downloaded from: http:///

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6 www.irf.com 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) fig 9. maximum drain current vs. case temperature downloaded from: http:///

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    !  "#$ *        + , tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch -.             /0 '   .11 &&1(1 downloaded from: http:///

www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity auirfr2407 dpak tube 75 auirfr2407 tape and reel 2000 AUIRFR2407TR tape and reel left 3000 AUIRFR2407TRl tape and reel right 3000 AUIRFR2407TRr downloaded from: http:///

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